在大r(s)值下，GaAs/AlGaAs异质结构中低密度二维空穴气的费米液体行为
Fermi-liquid behavior of the low-density 2D hole gas in a GaAs/AlGaAs heterostructure at large values of r(s).
作者信息
Proskuryakov Y Y, Savchenko A K, Safonov S S, Pepper M, Simmons M Y, Ritchie D A
机构信息
School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, United Kingdom.
出版信息
Phys Rev Lett. 2001 May 21;86(21):4895-8. doi: 10.1103/PhysRevLett.86.4895.
We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from "metallic"-to-"insulating" behavior of rho(T). It has been established that, at r(s) as large as 29, negative magnetoresistance does exist and is well described by weak localization theory. The dephasing time, extracted from the magnetoresistance, is dominated by the T2 term due to hole-hole scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory derived for small r(s).
我们研究了在ρ(T)从“金属”行为到“绝缘”行为的转变过程中，费米液体对稀二维空穴气描述的有效性。已经确定，在r(s)高达29时，负磁阻确实存在，并且可以用弱局域化理论很好地描述。从磁阻中提取的退相时间，在清洁极限下，由于空穴-空穴散射，主要由T2项主导。然而，与为小r(s)推导的理论相比，空穴-空穴相互作用的影响受到了抑制。
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