Belli M, Ianzini F, Sapora O, Tabocchini M A, Cera F, Cherubini R, Haque A M, Moschini G, Tiveron P, Simone G
Istituto Superiore di Sanità, Rome, Italy.
Adv Space Res. 1996;18(1-2):73-82. doi: 10.1016/0273-1177(95)00793-e.
Low energy protons and other densely ionizing light ions are known to have RBE>1 for cellular end points relevant for stochastic and deterministic effects. The occurrence of a close relationship between them and induction of DNA dsb is still a matter of debate. We studied the production of DNA dsb in V79 cells irradiated with low energy protons having LET values ranging from 11 to 31 keV/micrometer, i.e. in the energy range characteristic of the Bragg peak, using the sedimentation technique. We found that the initial yield of dsb is quite insensitive to proton LET and not significantly higher than that observed with X-rays, in agreement with recent data on V79 cells irradiated with alpha particles of various LET up to 120 keV/micrometer. By contrast, RBE for cell inactivation and for mutation induction rises with the proton LET. In experiments aimed at evaluating the rejoining of dsb after proton irradiation we found that the amount of dsb left unrepaired after 120 min incubation is higher for protons than for sparsely ionizing radiation. These results indicate that dsb are not homogeneous with respect to repair and give support to the hypothesis that increasing LET leads to an increase in the complexity of DNA lesions with a consequent decrease in their repairability.
低能质子和其他高密度电离轻离子对于与随机效应和确定性效应相关的细胞终点而言,其相对生物学效应(RBE)>1。它们与DNA双链断裂(dsb)诱导之间是否存在密切关系仍存在争议。我们使用沉降技术研究了用线性能量转移(LET)值范围为11至31 keV/微米的低能质子照射V79细胞时DNA dsb的产生情况,该能量范围处于布拉格峰的特征能量范围内。我们发现,dsb的初始产量对质子LET相当不敏感,且并不显著高于用X射线照射时观察到的产量,这与最近关于用LET高达120 keV/微米的各种α粒子照射V79细胞的数据一致。相比之下,细胞失活和突变诱导的RBE随质子LET升高。在旨在评估质子照射后dsb重新连接的实验中,我们发现,孵育120分钟后未修复的dsb数量,质子照射组比低电离辐射组更高。这些结果表明,dsb在修复方面并非均匀一致,并支持以下假设:LET增加会导致DNA损伤的复杂性增加,从而使其可修复性降低。