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过渡金属硫化物一维纳米结构的常压化学气相沉积合成及晶体学研究

A general atmospheric pressure chemical vapor deposition synthesis and crystallographic study of transition-metal sulfide one-dimensional nanostructures.

作者信息

Ge Jian-Ping, Wang Jin, Zhang Hao-Xu, Li Ya-Dong

机构信息

The Key Laboratory of Atomic and Molecular Nanoscience, Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China.

出版信息

Chemistry. 2004 Jul 19;10(14):3525-30. doi: 10.1002/chem.200400008.

Abstract

A series of transition-metal sulfide one-dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour-liquid-solid (VLS) and vapour-solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these nanostructures. The regularity of the growth in the direction of the hexagonal nanowire is explored; we find that it prefers to grow along (1 0 0), (1 1 0), or (0 0 x) directions owing to particular crystal structures. The adopted synthetic route was expected to provide abundant useful 1D building blocks for the research of mesoscopic physics and fabrication of nanoscale devices.

摘要

通过一种通用的常压化学气相沉积(APCVD)策略,合成了一系列过渡金属硫化物一维(1D)纳米结构。利用气-液-固(VLS)和气-固(VS)机制以及扫描电子显微镜(SEM)和透射电子显微镜(TEM)的观察结果来解释这些纳米结构的形成。探索了六方纳米线生长方向的规律性;我们发现,由于特定的晶体结构,它倾向于沿(1 0 0)、(1 1 0)或(0 0 x)方向生长。所采用的合成路线有望为介观物理研究和纳米级器件制造提供丰富有用的一维构建块。

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