Niu Hongquan, Hsi Wen C, Chu James C H, Kirk Michael C, Kouwenhoven Erik
Department of Medical Physics and Radiation Oncology, Rush University Medical Center, Chicago, Illinois 60612, USA.
Med Phys. 2004 Dec;31(12):3372-7. doi: 10.1118/1.1812609.
The nucletron Leipzig applicator is designed for (HDR) 192Ir brachy radiotherapy of surface lesions. The dosimetric characteristics of this applicator were investigated using simulation method based on Monte Carlo N-particle (MCNP) code and phantom measurements. The simulation method was validated by comparing calculated dose rate distributions of nucletron microSelectron HDR 192Ir source against published data. Radiochromic films and metal-oxide-semiconductor field-effect transistor (MOSFET) detectors were used for phantom measurements. The double exposure technique, correcting the nonuniform film sensitivity, was applied in the film dosimetry. The linear fit of multiple readings with different irradiation times performed for each MOSFET detector measurement was used to obtain the dose rate of each measurement and to correct the source transit-time error. The film and MOSFET measurements have uncertainties of 3%-7% and 3%-5%, respectively. The dose rate distributions of the Leipzig applicator with 30 mm opening calculated by the validated MC method were verified by measurements of film and MOSFET detectors. Calculated two-dimensional planar dose rate distributions show similar patterns as the film measurement. MC calculated dose rate at a reference point defined at depth 5 mm on the applicator's central axis is 7% lower than the film and 3% higher than the MOSFET measurements. The dose rate of a Leipzig applicator with 30 mm opening at reference point is 0.241+/-3% cGy h(-1) U(-1). The MC calculated depth dose rates and profiles were tabulated for clinic use.
核通莱比锡施源器专为表面病变的高剂量率(HDR)铱-192近距离放射治疗而设计。基于蒙特卡罗N粒子(MCNP)代码和模体测量的模拟方法,对该施源器的剂量学特性进行了研究。通过将核通microSelectron HDR铱-192源的计算剂量率分布与已发表数据进行比较,验证了模拟方法。使用放射变色胶片和金属氧化物半导体场效应晶体管(MOSFET)探测器进行模体测量。在胶片剂量学中采用了双曝光技术来校正胶片灵敏度的不均匀性。对每个MOSFET探测器测量进行不同照射时间的多次读数的线性拟合,以获得每次测量的剂量率并校正源传输时间误差。胶片和MOSFET测量的不确定度分别为3%-7%和3%-5%。通过胶片和MOSFET探测器的测量,验证了经验证的蒙特卡罗方法计算的开口为30 mm的莱比锡施源器的剂量率分布。计算得到的二维平面剂量率分布与胶片测量结果显示出相似的模式。蒙特卡罗方法计算的施源器中心轴上深度5 mm处参考点的剂量率比胶片测量值低7%,比MOSFET测量值高3%。开口为30 mm的莱比锡施源器在参考点的剂量率为0.241±3% cGy h-1 U-1。蒙特卡罗方法计算的深度剂量率和剂量分布曲线已制成表格供临床使用。