无偏置和反向偏置聚焦离子束铣削硅p-n结的离轴电子全息术。

Off-axis electron holography of unbiased and reverse-biased focused ion beam milled Si p-n junctions.

作者信息

Twitchett Alison C, Dunin-Borkowski Rafal E, Hallifax Robert J, Broom Ronald F, Midgley Paul A

机构信息

Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.

出版信息

Microsc Microanal. 2005 Feb;11(1):66-78. doi: 10.1017/S1431927605050087.

DOI:10.1017/S1431927605050087

PMID:15683573

Abstract

Off-axis electron holography is used to measure electrostatic potential profiles across a silicon p-n junction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled sample in situ in the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.

摘要

离轴电子全息术用于测量硅 p-n 结上的静电势分布，该硅 p-n 结已通过聚焦离子束（FIB）铣削制备成两种不同的样品几何形状，以便在透射电子显微镜（TEM）中进行检查。结果既来自传统的无偏 FIB 铣削样品，也来自一种新颖的样品几何形状，该几何形状允许在 TEM 中原位对 FIB 铣削样品施加反向偏压。将计算机模拟与结果进行拟合，以评估 TEM 样品制备对薄样品中电荷密度和静电势的影响。