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迷走神经刺激:癫痫发作缓解的预测因素。

Vagus nerve stimulation: predictors of seizure freedom.

作者信息

Janszky J, Hoppe M, Behne F, Tuxhorn I, Pannek H W, Ebner A

机构信息

Epilepsie-Zentrum Bethel, Mara Krankenhaus, Maraweg 21, Bielefeld 33617, Germany.

出版信息

J Neurol Neurosurg Psychiatry. 2005 Mar;76(3):384-9. doi: 10.1136/jnnp.2004.037085.

Abstract

OBJECTIVES

To identify predictive factors for the seizure-free outcome of vagus nerve stimulation (VNS).

METHODS

All 47 patients who had undergone VNS implantation at one centre and had at least one year of follow up were studied. They underwent complete presurgical evaluation including detailed clinical history, magnetic resonance imaging, and long term video-EEG with ictal and interictal recordings. After implantation, adjustment of stimulation parameters and concomitant antiepileptic drugs were at the discretion of the treating physician.

RESULTS

Mean (SD) age of the patients was 22.7 (11.6) years (range 7 to 53). Six patients (13%) became seizure-free after the VNS implantation. Only two variables showed a significant association with the seizure-free outcome: absence of bilateral interictal epileptiform discharges (IED) and presence of malformation of cortical development (MCD). Epilepsy duration showed a non-significant trend towards a negative association with outcome. By logistic regression analysis, only absence of bilateral IED correlated independently with successful VNS treatment (p<0.01, odds ratio = 29.2 (95% confidence interval, 2.4 to 353)). Bilateral IED (independent or bilateral synchronous) was found in one of six seizure-free patients and in 33 of 41 non-seizure-free patients. When bilateral IED were absent, the sensitivity for seizure-free outcome was 0.83 (0.44 to 0.97), and the specificity was 0.80 (0.66 to 0.90).

CONCLUSIONS

Bilateral IED was independently associated with the outcome of VNS. These results are preliminary because they were based on a small patient population. They may facilitate prospective VNS studies enrolling larger numbers of patients to confirm the results.

摘要

目的

确定迷走神经刺激术(VNS)无癫痫发作结局的预测因素。

方法

对在一个中心接受VNS植入且至少随访一年的47例患者进行研究。他们接受了完整的术前评估,包括详细的临床病史、磁共振成像以及带有发作期和发作间期记录的长期视频脑电图检查。植入后,刺激参数的调整和抗癫痫药物的联合使用由治疗医师自行决定。

结果

患者的平均(标准差)年龄为22.7(11.6)岁(范围7至53岁)。6例患者(13%)在VNS植入后实现无癫痫发作。只有两个变量与无癫痫发作结局存在显著关联:无双侧发作间期癫痫样放电(IED)和存在皮质发育畸形(MCD)。癫痫病程与结局呈负相关,但趋势不显著。通过逻辑回归分析,只有无双侧IED与VNS治疗成功独立相关(p<0.01,优势比=29.2(95%置信区间,2.4至353))。6例无癫痫发作患者中有1例以及41例非无癫痫发作患者中有33例发现有双侧IED(独立或双侧同步)。当不存在双侧IED时,无癫痫发作结局的敏感性为0.83(0.44至0.97),特异性为0.80(0.66至0.90)。

结论

双侧IED与VNS结局独立相关。这些结果是初步的,因为它们基于小样本患者群体。它们可能有助于开展纳入更多患者的前瞻性VNS研究以证实这些结果。

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