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能带绝缘体和莫特绝缘体中齐纳击穿的基态衰减率。

Ground-state decay rate for the Zener breakdown in band and Mott insulators.

作者信息

Oka Takashi, Aoki Hideo

机构信息

Department of Physics, University of Tokyo, Hongo, Tokyo 113-0033, Japan.

出版信息

Phys Rev Lett. 2005 Sep 23;95(13):137601. doi: 10.1103/PhysRevLett.95.137601. Epub 2005 Sep 21.

Abstract

Nonlinear transport of electrons in strong electric fields, as typified by dielectric breakdown, is reformulated in terms of the ground-state decay rate originally studied by Schwinger in nonlinear QED. We discuss the effect of electron interaction on Zener tunneling by comparing the dielectric breakdown of the band insulator and the Mott insulator, where the latter is studied by the time-dependent density-matrix renormalization group. The relation with the Berry's phase theory of polarization is also established.

摘要

以介电击穿为典型的强电场中电子的非线性输运,根据施温格最初在非线性量子电动力学中研究的基态衰变率进行了重新表述。我们通过比较带绝缘体和莫特绝缘体的介电击穿来讨论电子相互作用对齐纳隧穿的影响,其中后者是通过含时密度矩阵重整化群进行研究的。还建立了与贝里极化相理论的关系。

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