Li Xiao-wei, Li Xin-zheng, Lai Wei-dong, Jiang Xiao-li, Tian Xiao-dong, Yang Shao-peng, Fu Guang-sheng
College of Physics Science and Technology, Hebei University, Baoding 071002, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2005 Jun;25(6):815-8.
The time-resolved spectra of free photoelectrons and shallow-trapped electrons in the T-grains AgBrI emulsion were simultaneously detected with microwave absorption and dielectric spectrum detection technique. The results indicate that the electron trap effects of sulfur sensitization centers and sulfur-plus-gold sensitization centers are different with equal quantities of Na2S2O3 added. The sulfur sensitization centers acted as a deep electron trap to pick up the electronic decay because of increasing the number of deep trapped electrons, while the sulfur-plus-gold sensitization centers as a shallow electron trap decrease the electronic decay through effectively controlling the recombination between the electrons and the holes. The depth of sulfur-plus-gold sensitization center is shallower than that of sulfur sensitization center after the KAuCl4 is added. The effects of sulfur sensitization center and sulfur-plus-gold sensitization center on the photoelectron decay are different in different sections of decay curves through the change in electron time-resolved spectra.