n型掺杂砷化镓中的自旋霍尔电导率理论。
Theory of spin hall conductivity in n-doped GaAs.
作者信息
Engel Hans-Andreas, Halperin Bertrand I, Rashba Emmanuel I
机构信息
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
出版信息
Phys Rev Lett. 2005 Oct 14;95(16):166605. doi: 10.1103/PhysRevLett.95.166605. Epub 2005 Oct 13.
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].
我们发展了一种关于半导体中本征自旋流的理论，该理论源于带电散射体处的自旋轨道耦合，这导致了对自旋霍尔电导率的自旋倾斜散射和侧向跳跃贡献。将该理论应用于体相n型砷化镓，无需任何自由参数，我们发现自旋流与加藤等人[《科学》306, 1910 (2004)]的实验结果合理吻合。
Zotero 插件