Pena Maria, Meng Xiaoguang, Korfiatis George P, Jing Chuanyong
Center for Environmental Systems, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA.
Environ Sci Technol. 2006 Feb 15;40(4):1257-62. doi: 10.1021/es052040e.
Arsenate [As(V)] and arsenite [As(III)] interactions at the solid-water interface of nanocrystalline TiO2 were investigated using electrophoretic mobility (EM) measurements, Fourier transform infrared (FTIR) spectroscopy, extended X-ray absorption fine structure (EXAFS) spectroscopy, and surface complexation modeling. The adsorption of As(V) and As(III) decreased the point of zero charge of TiO2 from 5.8 to 5.2, suggesting the formation of negatively charged inner-sphere surface complexes for both arsenic species. The EXAFS analyses indicate that both As(V) and As(III) form bidentate binuclear surface complexes as evidenced by an average Ti-As(V) bond distance of 3.30 A and Ti-As(III) bond distance of 3.35 A. The FTIR bands caused by vibrations of the adsorbed arsenic species remained at the same energy levels at different pH values. Consequently, the surface complexes on TiO2 maintained the same nonprotonated speciation at pH values from 5 to 10, and the dominant surface species were (TiO)2AsO2- and (TiO)2AsO- for As(V) and As(III), respectively. The surface configurations constrained with the spectroscopic results were formulated in the diffuse layer model to describe the adsorption behavior of As in the pH range between 4 and 12. The study suggests that TiO2 is an effective adsorbent for As removal due to its high surface area and the presence of high affinity surface hydroxyl groups.
利用电泳迁移率(EM)测量、傅里叶变换红外(FTIR)光谱、扩展X射线吸收精细结构(EXAFS)光谱和表面络合模型,研究了纳米晶TiO₂固-水界面上砷酸盐[As(V)]和亚砷酸盐[As(III)]的相互作用。As(V)和As(III)的吸附使TiO₂的零电荷点从5.8降至5.2,这表明两种砷物种均形成了带负电荷的内球表面络合物。EXAFS分析表明,As(V)和As(III)均形成双齿双核表面络合物,平均Ti-As(V)键距为3.30 Å,Ti-As(III)键距为3.35 Å,即为证据。由吸附的砷物种振动引起的FTIR谱带在不同pH值下保持在相同的能级。因此,TiO₂表面络合物在pH值为5至10时保持相同的非质子化形态,As(V)和As(III)的主要表面物种分别为(TiO)₂AsO₂⁻和(TiO)₂AsO⁻。结合光谱结果确定的表面构型被纳入扩散层模型,以描述As在4至12 pH范围内的吸附行为。该研究表明,TiO₂因其高表面积和高亲和力表面羟基的存在,是一种有效的As去除吸附剂。