Jiang Ying-Bing, Liu Nanguo, Gerung Henry, Cecchi Joseph L, Brinker C Jeffrey
Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131, USA.
J Am Chem Soc. 2006 Aug 30;128(34):11018-9. doi: 10.1021/ja061097d.
On a porous substrate, regular atomic layer deposition (ALD) not only takes place on top of the substrate but also penetrates into the internal porosity. Here we report a plasma-assisted process in which the ALD precursors are chosen to be nonreactive unless triggered by plasma, so that ALD can be spatially defined by the supply of plasma irradiation. Since plasma cannot penetrate within the internal porosity, ALD has been successfully confined to the immediate surface. This not only gives a possible solution for sealing of porous low dielectric constant films with a conformal layer of nm-scale thickness but also enables us to progressively reduce the pore size of mesoporous materials in a sub-A/cycle fashion for membrane formation.
在多孔衬底上,常规原子层沉积(ALD)不仅发生在衬底表面,还会渗入内部孔隙。在此,我们报道一种等离子体辅助工艺,其中ALD前驱体被选择为非反应性的,除非被等离子体触发,这样ALD就可以通过等离子体辐照的供应在空间上进行定义。由于等离子体无法渗透到内部孔隙中,ALD已成功地被限制在紧邻的表面。这不仅为用纳米级厚度的保形层密封多孔低介电常数薄膜提供了一种可能的解决方案,还使我们能够以亚埃/循环的方式逐步减小介孔材料的孔径以形成膜。