Zaefferer S
Max Planck Institute for Iron Research, Max-Planck-Street 1, D-40237 Düsseldorf, Germany.
Ultramicroscopy. 2007 Feb-Mar;107(2-3):254-66. doi: 10.1016/j.ultramic.2006.08.007. Epub 2006 Sep 25.
The present paper is divided into two main sections. In the first, the formation mechanisms of backscatter Kikuchi patterns (BKP) are discussed on the basis of measurements on the sharpness of Kikuchi lines and on the spatial, that means the lateral and depth resolution of the technique. We propose that thermal diffuse scattering is the important incoherent scattering mechanism involved in pattern formation. This mechanism is not considered in the classical description of the origin of backscattered electrons in the scanning electron microscope (SEM) which is why there is in some important points no agreement between classical Monte-Carlo-type electron trajectory simulations and experimental results. We assume that the energy spectrum of the backscattered electrons shows, similar to the spectra in transmission electron microscopy, a sharp zero-loss peak. In the second section, we discuss the intensity of Kikuchi bands in BKP. It is shown that the kinematical theory gives-of course-not the correct intensities, but that these intensities are, on the other hand, not too far off the experimental ones. We subsequently introduce a simple intensity correction procedure that is based on the two-beam dynamical theory, originally proposed by Blackman for transmission electron diffraction patterns. It is shown by examples of diffraction patterns of niobium and silicon that this procedure leads to satisfying results, once two unknown variables (a universal constant and the exit depth of the electrons) have been empirically fit. It is assumed that in the future, this correction will improve the possibilities of phase identification by backscatter Kikuchi diffraction patterns.
本文分为两个主要部分。在第一部分中,基于对菊池线清晰度以及该技术的空间分辨率(即横向和深度分辨率)的测量,讨论了背散射菊池花样(BKP)的形成机制。我们提出热漫散射是参与花样形成的重要非相干散射机制。在扫描电子显微镜(SEM)中,背散射电子起源的经典描述未考虑这一机制,这就是为什么在一些要点上,经典的蒙特卡罗型电子轨迹模拟与实验结果不一致。我们假设背散射电子的能谱与透射电子显微镜中的能谱类似,呈现出一个尖锐的零损失峰。在第二部分中,我们讨论了BKP中菊池带的强度。结果表明,运动学理论当然给出的不是正确的强度,但另一方面,这些强度与实验强度相差不大。随后,我们引入了一种基于双束动力学理论的简单强度校正程序,该理论最初由布莱克曼提出用于透射电子衍射花样。通过铌和硅的衍射花样示例表明,一旦通过经验拟合两个未知变量(一个通用常数和电子的出射深度),该程序会得出令人满意的结果。我们假设在未来,这种校正将提高通过背散射菊池衍射花样进行相识别的可能性。