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垂直排列的氧化锌纳米针的选择性生长。

Selective growth of vertically-aligned ZnO nano-needles.

作者信息

Lee Sang Hyun, Lee Wook Hyun, Lee Seogwoo, Goto Hiroki, Baba Takeshi, Cho Meoung-Whan, Yao Takafumi, Lee Hyun Jung, Yasukawa Tomoyuki, Matsue Tomokazu, Ko Hyunchul

机构信息

CIR, Tohoku University, 6-3, Aramaki, Aoba-ku, Sendai 980-8578, Japan.

出版信息

J Nanosci Nanotechnol. 2006 Nov;6(11):3351-4. doi: 10.1166/jnn.2006.008.

Abstract

Vertically-aligned zinc oxide (ZnO) nano-needles have been selectively grown on the Si (100) substrates using chemical vapor transport and condensation method without metal catalyst. The selective nucleation of nano-needles was achieved by the controlled treatment of substrate surface using zinc acetate aqueous solution. The nano-needles were selectively grown on the zinc acetate treated area, while the nano-tetrapod structures were formed on the non-treated area. The nano-needles have uniform tip-diameter and length, about 10 nm and 2-3 microm, respectively. The angle of the ZnO nano-needles from the substrate was 90 +/- 0.2 degrees. The structural and optical properties of nano-needles and nanotetrapod structures were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The results showed that ZnO nano-needles grow along the c-axis of the crystal plane due to the c-oriented ZnO nanoseeds formed by zinc acetate treatment. The nano-needles have strong ultraviolet emission peak of 3.29 eV with green emission of 2.3 eV at room temperature. This selective growth technique of vertical nano-needles using aqueous solution method has potential applications in the field emission devices or optoelectronic devices hybridized with silicon based electronic devices.

摘要

采用化学气相输运和冷凝法,在无金属催化剂的情况下,在硅(100)衬底上选择性地生长了垂直排列的氧化锌(ZnO)纳米针。通过用醋酸锌水溶液对衬底表面进行可控处理,实现了纳米针的选择性成核。纳米针在醋酸锌处理过的区域选择性生长,而在未处理区域形成纳米四足结构。纳米针具有均匀的尖端直径和长度,分别约为10纳米和2 - 3微米。ZnO纳米针与衬底的夹角为90±0.2度。利用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)对纳米针和纳米四足结构的结构和光学性质进行了研究。结果表明,由于醋酸锌处理形成的c轴取向的ZnO纳米种子,ZnO纳米针沿晶面的c轴生长。纳米针在室温下有3.29 eV的强紫外发射峰和2.3 eV的绿色发射峰。这种采用水溶液法选择性生长垂直纳米针的技术在场发射器件或与硅基电子器件混合的光电器件领域具有潜在应用。

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