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硅缺陷对噻吩类化合物在多环芳烃上吸附的影响:以噻吩 + 蒄为最简单模型的理论研究

Influence of silicon defects on the adsorption of thiophene-like compounds on polycyclic aromatic hydrocarbons: a theoretical study using thiophene + coronene as the simplest model.

作者信息

Galano Annia

机构信息

Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas 152, 07730 México D.F., Mexico.

出版信息

J Phys Chem A. 2007 Mar 8;111(9):1677-82. doi: 10.1021/jp0665271. Epub 2007 Feb 13.

Abstract

Physisorption and chemisorption processes of thiophene on coronene and 2Si-coronene have been studied using density functional theory and MP2 methods. These systems have been chosen as the simplest models to describe the adsorption of thiophene-like compounds on polycyclic aromatic hydrocarbons (PAHs). The calculated data suggest that the presence of silicon atoms in PAHs could favor their interaction with thiophene and similar compounds. Small stabilization energies have been found for several physisorbed complexes. The thiophene chemisorption on coronene seems very unlikely to occur, while that on 2Si-coronene leads to addition products which are very stable, with respect to the isolated reactants. These chemisorption processes were found to be exoergic (DeltaG < 0) in the gas phase and in the nonpolar liquid phase. The results reported in this work suggest that silicon defects on extended polycyclic aromatic hydrocarbons, such as graphite, soot, and large-diameter carbon nanotubes, could make them useful in the removal processes of aromatic sulfur compounds from oil hydrocarbons.

摘要

采用密度泛函理论和MP2方法研究了噻吩在并五苯和2Si-并五苯上的物理吸附和化学吸附过程。选择这些体系作为描述噻吩类化合物在多环芳烃(PAHs)上吸附的最简单模型。计算数据表明,PAHs中硅原子的存在有利于它们与噻吩及类似化合物的相互作用。已发现几种物理吸附络合物具有较小的稳定能。噻吩在并五苯上的化学吸附似乎极不可能发生,而在2Si-并五苯上的化学吸附会生成相对于孤立反应物非常稳定的加成产物。这些化学吸附过程在气相和非极性液相中均为放热过程(ΔG < 0)。这项工作报道的结果表明,在诸如石墨、烟灰和大直径碳纳米管等扩展多环芳烃上的硅缺陷,可能使它们在从石油烃中去除芳香族硫化合物的过程中发挥作用。

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