Division of Physical Chemistry, Department of Chemistry, University of Ioannina, 45110 Ioannina, Greece.
Bioinorg Chem Appl. 2007;2007:46393. doi: 10.1155/2007/46393.
Trends in the properties of normal valent and multivalent halogen-oxygen bonding are examined for the isomers of the halogen polyoxide families of the types (YXO2) and (YXO3), Y = Cl, Br, I, H, CH(3), X = Cl, Br, I. A qualitative model is formulated on the relationship between the X-O bond distance variations, the ionic character of the bonding, and the degree of halogen valence. The relative stability and enthalpy of formation of each species are also suggested to correlate with the ionic nature of the X-O bonding and the electrostatic character of the Y, YO fragments. In the model presented, halogen hypervalence is interpreted to be the result of partial p --> d promotion of lone-pair valence electrons followed by the formation of two, four, or six additional pd hybrid bonds around the halogen atom.
探讨了同类型(YXO2)和(YXO3)的卤素多氧化物族的异构体中,单价和多价卤-氧键的性质变化趋势,其中 Y = Cl、Br、I、H、CH(3),X = Cl、Br、I。在 X-O 键距离变化、键的离子特性和卤化物价态程度之间的关系上建立了定性模型。还提出了每种物质的相对稳定性和生成焓与 X-O 键的离子特性和 Y、YO 片段的静电特性相关。在所提出的模型中,卤素超价被解释为孤对价电子的部分 p --> d 激发的结果,随后在卤素原子周围形成两个、四个或六个额外的 pd 杂化键。