Suppr超能文献

通过三甲基铟和供体官能化醇进行气溶胶辅助化学气相沉积法制备氧化铟薄膜。

Aerosol assisted chemical vapor deposition of In2O3 films from Me3In and donor functionalized alcohols.

作者信息

Basharat Siama, Carmalt Claire J, Barnett Sarah A, Tocher Derek A, Davies Hywel O

机构信息

Materials Chemistry Centre, Department of Chemistry, University College London, 20 Gordon Street, London, United Kingdom.

出版信息

Inorg Chem. 2007 Oct 29;46(22):9473-80. doi: 10.1021/ic701372b. Epub 2007 Oct 3.

Abstract

The reaction of Me3In and ROH (R = CH2CH2NMe2, CH(CH3)CH2NMe2, C(CH3)2CH2OMe, CH2CH2OMe) in toluene under aerosol assisted chemical vapor deposition (AACVD) conditions leads to the production of indium oxide thin films on glass. The indium oxide films were deposited at 550 degrees C and analyzed by scanning electron microscopy (SEM), X-ray powder diffraction, wavelength dispersive analysis of X-rays (WDX), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. This CVD technique offers a rapid, convenient route to In2O3, which presumably involves the in situ formation of dimethylindium alkoxides, of the type [Me2InOR]2. In order to identify compounds present in the aerosol mist, the solution-phase reaction between Me3In and ROH (R = CH2CH2NMe2, C(CH3)2CH2OMe, CH(CH3)CH2NMe2, CH(CH2NMe2)2) at room temperature in toluene was carried out. Dimeric indium alkoxides, of the type [Me2In(OR)]2, were isolated, and their structures were determined by X-ray crystallography.

摘要

在气溶胶辅助化学气相沉积(AACVD)条件下,三甲基铟(Me3In)与ROH(R = CH2CH2NMe2、CH(CH3)CH2NMe2、C(CH3)2CH2OMe、CH2CH2OMe)在甲苯中反应,可在玻璃上生成氧化铟薄膜。氧化铟薄膜在550摄氏度下沉积,并通过扫描电子显微镜(SEM)、X射线粉末衍射、X射线波长色散分析(WDX)、X射线光电子能谱(XPS)和拉曼光谱进行分析。这种化学气相沉积技术为制备In2O3提供了一条快速、便捷的途径,推测该过程涉及原位形成[Me2InOR]2类型的二甲基铟醇盐。为了鉴定气溶胶雾中存在的化合物,在室温下于甲苯中进行了Me3In与ROH(R = CH2CH2NMe2、C(CH3)2CH2OMe、CH(CH3)CH2NMe2、CH(CH2NMe2)2)的溶液相反应。分离出了[Me2In(OR)]2类型的二聚铟醇盐,并通过X射线晶体学确定了它们的结构。

相似文献

1
Aerosol assisted chemical vapor deposition of In2O3 films from Me3In and donor functionalized alcohols.
Inorg Chem. 2007 Oct 29;46(22):9473-80. doi: 10.1021/ic701372b. Epub 2007 Oct 3.
2
Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols.
Dalton Trans. 2008 Feb 7(5):591-5. doi: 10.1039/b713804k. Epub 2008 Jan 2.
5
Molecular precursors to gallium oxide thin films.
Dalton Trans. 2004 Nov 7(21):3475-80. doi: 10.1039/b412434k. Epub 2004 Sep 23.
7
9
Gallium hydride complexes stabilised by multidentate alkoxide ligands: precursors to thin films of Ga2O3 at low temperatures.
Chemistry. 2012 May 7;18(19):6079-87. doi: 10.1002/chem.201103380. Epub 2012 Mar 27.

引用本文的文献

1
Synthesis of indium oxide microparticles using aerosol assisted chemical vapour deposition.
RSC Adv. 2020 Jun 11;10(38):22487-22490. doi: 10.1039/d0ra02678f. eCollection 2020 Jun 10.
2
Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes ethyl and amide zinc thioureides.
Chem Sci. 2021 May 24;12(25):8822-8831. doi: 10.1039/d1sc01846a. eCollection 2021 Jul 1.
3
High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.
Chem Mater. 2014 Jan 28;26(2):1195-1203. doi: 10.1021/cm4035837. Epub 2013 Dec 22.

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验