通过共振隧穿光谱探测的（镓，锰）砷价带的交换介导各向异性。
Exchange-mediated anisotropy of (ga,mn)as valence-band probed by resonant tunneling spectroscopy.
作者信息
Elsen M, Jaffrès H, Mattana R, Tran M, George J-M, Miard A, Lemaître A
机构信息
Unité Mixte de Physique CNRS-Thales, Route Départementale 128, 91767 Palaiseau Cedex and Université Paris-Sud 91405, Orsay, France.
出版信息
Phys Rev Lett. 2007 Sep 21;99(12):127203. doi: 10.1103/PhysRevLett.99.127203. Epub 2007 Sep 17.
We report on experiments and theory of resonant tunneling anisotropic magnetoresistance (TAMR) in AlAs/GaAs/AlAs quantum wells (QW) contacted by a (Ga,Mn)As ferromagnetic electrode. Such resonance effects manifest themselves by bias-dependent oscillations of the TAMR signal correlated to the successive positions of heavy (HH) and light (LH) quantized hole energy levels in GaAs QW. We have modeled the experimental data by calculating the spin-dependent resonant tunneling transmission in the frame of the 6 x 6 valence-band k.p theory. The calculations emphasize the opposite contributions of the (Ga,Mn)As HH and LH subbands near the Gamma point, unraveling the anatomy of the diluted magnetic semiconductor valence band.
我们报道了通过（Ga，Mn）As铁磁电极接触的AlAs/GaAs/AlAs量子阱（QW）中的共振隧穿各向异性磁阻（TAMR）实验及理论。这种共振效应通过与GaAs量子阱中重（HH）和轻（LH）量子化空穴能级的连续位置相关的TAMR信号的偏置依赖振荡表现出来。我们通过在6×6价带k.p理论框架下计算自旋相关的共振隧穿透射率对实验数据进行了建模。计算结果强调了Γ点附近（Ga，Mn）As的HH和LH子带的相反贡献，揭示了稀磁半导体价带的结构。
Zotero 插件