Oh Kieseok, Chung Jae-Hyun, Riley James J, Liu Yaling, Liu Wing Kam
University of Washington, Department of Mechanical Engineering, Campus Box 352600, Seattle, Washington 98195-2600, USA.
Langmuir. 2007 Nov 6;23(23):11932-40. doi: 10.1021/la701755s. Epub 2007 Oct 13.
The dielectrophoretic assembly of silicon carbide (SiC) nanowires in a microfluidic flow is shown to enhance the orientation and deposition yield of nanowires. The fluid flow delivers and orients the nanowires in the vicinity of a gap, and they are attracted and deposited by a dielectrophoretic force. Depending upon their lengths, the nanowires are selectively attracted to the gap because the dielectrophoretic force is largest when the lengths are comparable to the gap size. Precise control over the fluid flow and dielectrophoresis shows various interesting phenomena such as landing, shifting, and uniform spacing of nanowires during the assembly process. As a result, the precise control enables the selective positioning of nanowires only at the gap where the fluid direction is consistent with the electric field orientation.
碳化硅(SiC)纳米线在微流体流动中的介电泳组装显示出可提高纳米线的取向和沉积产率。流体流动在间隙附近输送并使纳米线取向,并且它们会被介电泳力吸引并沉积。根据纳米线的长度,它们会被选择性地吸引到间隙处,因为当长度与间隙尺寸相当时,介电泳力最大。对流体流动和介电泳的精确控制显示出各种有趣的现象,例如在组装过程中纳米线的着陆、移动和均匀间距。因此,这种精确控制能够仅在流体方向与电场取向一致的间隙处选择性地定位纳米线。