Tunaboylu B, Harvey P, Esener S C
Dept. of Res. and Dev., Cerprobe Corp., Gilbert, AZ.
IEEE Trans Ultrason Ferroelectr Freq Control. 1998;45(4):1105-12. doi: 10.1109/58.710594.
Lead lanthanum zirconate titanate (PLZT) thin films were deposited on r-plane sapphire at low temperatures by RF triode magnetron sputtering using lead compensated hot-pressed targets. To obtain fully perovskite phase in the films, two types of post-deposition processing were investigated: rapid thermal annealing (RTA) and furnace annealing (FA). Dielectric and electro-optic properties of PLZT films were found to be strongly dependent on annealing conditions. The peak dielectric constant of the films were 1200 and 2800 with Curie temperatures of 110 degrees C and 190 degrees C after RTA and FA processing, respectively. The dielectric losses in the films were fairly low; tan deltas were less than 0.02 after RTA and less than 0.04 after FA processing. The films showed good optical transmission characteristics after annealing and an anomalously large effective quadratic electro-optic effect was observed in one furnace annealed film.
采用铅补偿热压靶，通过射频三极管磁控溅射在低温下将锆钛酸铅镧（PLZT）薄膜沉积在r面蓝宝石上。为了在薄膜中获得完全的钙钛矿相，研究了两种类型的沉积后处理：快速热退火（RTA）和炉退火（FA）。发现PLZT薄膜的介电和电光性能强烈依赖于退火条件。经过RTA和FA处理后，薄膜的峰值介电常数分别为1200和2800，居里温度分别为110℃和190℃。薄膜中的介电损耗相当低；RTA处理后tanδ小于0.02，FA处理后小于0.04。退火后薄膜表现出良好的光学传输特性，并且在一片炉退火薄膜中观察到异常大的有效二次电光效应。
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