Marsili F, Bitauld D, Fiore A, Gaggero A, Mattioli F, Leoni R, Benkahoul M, Lévy F
Ecole Polytechnique Fédérale de Lausanne, Institute of Photonics and Quantum Electronics, Station 3, CH-1015 Lausanne, Switzerland.
Opt Express. 2008 Mar 3;16(5):3191-6. doi: 10.1364/oe.16.003191.
We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on bN thin films grown at a temperature compatible with monolithic integration. NbN films ranging from 150 nm to 3 nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400 degrees C SSPDs were fabricated on high quality NbN films of different thickness (7 to 3 nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300 nm.
我们展示了在与单片集成兼容的温度下生长的氮化硼（bN）薄膜上的高性能纳米线超导单光子探测器（SSPD）。通过直流磁控溅射在400摄氏度的氧化镁（MgO）衬底上沉积了厚度从150纳米到3纳米不等的氮化铌（NbN）薄膜。在最佳条件下沉积的不同厚度（7至3纳米）的高质量氮化铌薄膜上制备了SSPD。对SSPD进行了电学和光学表征。在4.2K下测得的最高量子效率（QE）值在1300纳米处为20%。
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