Co-SiO₂-Si金属氧化物半导体结构中与共膜厚度相关的横向光电效应。

The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.

作者信息

Xiao S Q, Wang H, Zhao Z C, Gu Y Z, Xia Y X, Wang Z H

机构信息

Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China.

出版信息

Opt Express. 2008 Mar 17;16(6):3798-806. doi: 10.1364/oe.16.003798.

DOI:10.1364/oe.16.003798

PMID:18542475

Abstract

We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.

摘要

我们报道了在具有天然SiO₂表面的n型硅衬底上沉积的薄金属钴膜中的一种瞬态横向光电效应（LPE）。在激光束的非均匀照射下，横向光电压（LPV）对金属膜平面内的激光位置表现出高灵敏度。这种效应可以用金属与半导体之间形成的金属-半导体（MS）结来解释。LPV显著依赖于钴膜的厚度。对于Co（2.8mn）-SiO₂-Si，位置灵敏度显示出42.6 mV/mm的峰值，并且随着钴膜厚度的增加而大幅降低。我们通过金属膜的短路效应来解释这一点。