Lima R C, Macario L R, Espinosa J W M, Longo V M, Erlo R, Marana N L, Sambrano J R, dos Santos M L, Moura A P, Pizani P S, Andrés J, Longo E, Varela J A
Instituto de Química, Universidade Estadual Paulista, Laboratório Interdisciplinar de Eletroquímica e Cerâmica, P.O. Box 355, 14800-900, Araraquara, SP, Brazil.
J Phys Chem A. 2008 Sep 25;112(38):8970-8. doi: 10.1021/jp8022474. Epub 2008 Jul 25.
A joint use of experimental and theoretical techniques allows us to understand the key role of intermediate- and short-range defects in the structural and electronic properties of ZnO single crystals obtained by means of both conventional hydrothermal and microwave-hydrothermal synthesis methods. X-ray diffraction, Raman spectra, photoluminescence, scanning electronic and transmission electron microscopies were used to characterize the thermal properties, crystalline and optical features of the obtained nano and microwires ZnO structures. In addition, these properties were further investigated by means of two periodic models, crystalline and disordered ZnO wurtzite structure, and first principles calculations based on density functional theory at the B3LYP level. The theoretical results indicate that the key factor controlling the electronic behavior can be associated with a symmetry breaking process, creating localized electronic levels above the valence band.
实验技术与理论技术的联合使用,使我们能够理解通过传统水热法和微波水热合成法获得的ZnO单晶的结构和电子性质中,中短程缺陷所起的关键作用。利用X射线衍射、拉曼光谱、光致发光、扫描电子显微镜和透射电子显微镜来表征所获得的纳米和微米线ZnO结构的热性质、晶体和光学特征。此外,通过两种周期性模型(晶体和无序的纤锌矿结构的ZnO)以及基于密度泛函理论在B3LYP水平上的第一性原理计算,对这些性质进行了进一步研究。理论结果表明,控制电子行为的关键因素可能与对称性破缺过程有关,该过程在价带上方产生局域电子能级。