Fan Zhiyong, Ho Johnny C, Jacobson Zachery A, Razavi Haleh, Javey Ali
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
Proc Natl Acad Sci U S A. 2008 Aug 12;105(32):11066-70. doi: 10.1073/pnas.0801994105. Epub 2008 Aug 6.
We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of approximately 80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 x 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.
我们报道了用于异质多功能电路的纳米线大规模集成,该电路利用了单晶纳米材料的传感和电子功能。具有光学活性的CdSe纳米线的高度有序且平行的阵列以及高迁移率的Ge/Si纳米线被确定性地定位在基板上,并分别配置为光电二极管和晶体管。然后将纳米线传感器和电子器件连接起来,以实现具有片上集成的全纳米线电路,该电路能够以高灵敏度和精度检测和放大光信号。值得注意的是,该工艺具有高度可重复性和可扩展性,功能电路的成品率约为80%,因此能够制造具有图像传感功能的纳米线光电传感器电路的大型阵列(即13×20)。将纳米线传感器与集成电子器件进行大规模且高度均匀的连接的能力,是纳米材料用于传感器应用集成方面的一项重要进展。