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三维磁性绝缘体中的拓扑表面态

Topological surface States in three-dimensional magnetic insulators.

作者信息

Moore Joel E, Ran Ying, Wen Xiao-Gang

机构信息

Department of Physics, University of California, Berkeley, California 94720, USA.

出版信息

Phys Rev Lett. 2008 Oct 31;101(18):186805. doi: 10.1103/PhysRevLett.101.186805.

Abstract

An electron moving in a magnetically ordered background feels an effective magnetic field that can be both stronger and more rapidly varying than typical externally applied fields. One consequence is that insulating magnetic materials in three dimensions can have topologically nontrivial properties of the effective band structure. For the simplest case of two bands, these "Hopf insulators" are characterized by a topological invariant as in quantum Hall states and Z2 topological insulators, but instead of a Chern number or parity, the underlying invariant is the Hopf invariant that classifies maps from the three-sphere to the two-sphere. This Letter gives an efficient algorithm to compute whether a given magnetic band structure has nontrivial Hopf invariant, a double-exchange-like tight-binding model that realizes the nontrivial case, and a numerical study of the surface states of this model.

摘要

在磁有序背景中运动的电子会感受到一个有效磁场,该磁场可能比典型的外部施加磁场更强且变化更快。一个结果是,三维绝缘磁性材料的有效能带结构可能具有拓扑非平凡性质。对于最简单的双能带情况,这些“霍普夫绝缘体”的特征是具有一个拓扑不变量,类似于量子霍尔态和Z2拓扑绝缘体中的情况,但与陈数或宇称不同,其基本不变量是将三维球面映射到二维球面的映射分类的霍普夫不变量。本文给出了一种有效算法,用于计算给定的磁能带结构是否具有非平凡的霍普夫不变量,一个实现非平凡情况的类似双交换的紧束缚模型,以及对该模型表面态的数值研究。

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