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使用调强技术对头颈部治疗的表面剂量进行体内验证。

In vivo verification of superficial dose for head and neck treatments using intensity-modulated techniques.

作者信息

Qi Zhen-Yu, Deng Xiao-Wu, Huang Shao-Min, Zhang Li, He Zhi-Chun, Li X Allen, Kwan Ian, Lerch Michael, Cutajar Dean, Metcalfe Peter, Rosenfeld Anatoly

机构信息

State Key Laboratory of Oncology in Southern China, Guangzhou 510060, China.

出版信息

Med Phys. 2009 Jan;36(1):59-70. doi: 10.1118/1.3030951.

Abstract

Skin dose is one of the key issues for clinical dosimetry in radiation therapy. Currently planning computer systems are unable to accurately predict dose in the buildup region, leaving ambiguity as to the dose levels actually received by the patient's skin during radiotherapy. This is one of the prime reasons why in vivo measurements are necessary to estimate the dose in the buildup region. A newly developed metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector designed specifically for dose measurements in rapidly changing dose gradients was introduced for accurate in vivo skin dosimetry. The feasibility of this detector for skin dose measurements was verified in comparison with plane parallel ionization chamber and radiochromic films. The accuracy of a commercial treatment planning system (TPS) in skin dose calculations for intensity-modulated radiation therapy treatment of nasopharyngeal carcinoma was evaluated using MOSFET detectors in an anthropomorphic phantom as well as on the patients. Results show that this newly developed MOSFET detector can provide a minimal but highly reproducible intrinsic buildup of 7 mg cm(-2) corresponding to the requirements of personal surface dose equivalent Hp (0.07). The reproducibility of the MOSFET response, in high sensitivity mode, is found to be better than 2% at the phantom surface for the doses normally delivered to the patients. The MOSFET detector agrees well with the Attix chamber and the EBT Gafchromic film in terms of surface and buildup region dose measurements, even for oblique incident beams. While the dose difference between MOSFET measurements and TPS calculations is within measurement uncertainty for the depths equal to or greater than 0.5 cm, an overestimation of up to 8.5% was found for the surface dose calculations in the anthropomorphic phantom study. In vivo skin dose measurements reveal that the dose difference between the MOSFET results and the TPS calculations was on average -7.2%, ranging from -4.3% to -9.2%. The newly designed MOSFET detector encapsulated into a thin water protective film has a minimal reproducible intrinsic buildup recommended for skin dosimetry. This feature makes it very suitable for routine IMRT QA and accurate in vivo skin dosimetry.

摘要

皮肤剂量是放射治疗临床剂量学的关键问题之一。目前的治疗计划计算机系统无法准确预测剂量建成区的剂量,导致在放射治疗期间患者皮肤实际接受的剂量水平存在不确定性。这是需要进行体内测量以估计剂量建成区剂量的主要原因之一。一种专门为在快速变化的剂量梯度中进行剂量测量而开发的新型金属氧化物半导体场效应晶体管(MOSFET)探测器被引入,用于精确的体内皮肤剂量测定。通过与平行板电离室和放射变色胶片比较,验证了该探测器用于皮肤剂量测量的可行性。使用MOSFET探测器在人体模型以及患者身上评估了商业治疗计划系统(TPS)在鼻咽癌调强放射治疗皮肤剂量计算中的准确性。结果表明,这种新开发的MOSFET探测器可以提供最小但高度可重复的7mg/cm²本征建成,符合个人表面剂量当量Hp(0.07)的要求。在人体模型表面,对于通常给予患者的剂量,MOSFET响应在高灵敏度模式下的可重复性优于2%。即使对于斜入射束,MOSFET探测器在表面和剂量建成区剂量测量方面与Attix电离室和EBT放射变色胶片的一致性也很好。虽然对于深度等于或大于0.5cm的情况,MOSFET测量值与TPS计算值之间的剂量差异在测量不确定度范围内,但在人体模型研究中发现表面剂量计算存在高达8.5%的高估。体内皮肤剂量测量显示,MOSFET测量结果与TPS计算结果之间的剂量差异平均为-7.2%,范围为-4.3%至-9.2%。封装在薄水保护膜中的新设计MOSFET探测器具有适合皮肤剂量测定的最小可重复本征建成。这一特性使其非常适合常规调强放疗质量保证和精确的体内皮肤剂量测定。

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