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(100)硅表面的硅烯缺陷如何解释通过X射线光电子能谱观察到的异常特征。

How silylene defects at (100) Si surfaces can account for the anomalous features observed via x-ray photoelectron spectroscopy.

作者信息

Cerofolini G F, Giorgi G, Sgamellotti A, Belanzoni P

机构信息

Department of Materials Science and CNISM, University of Milano-Bicocca, Via Cozzi 53, 20125 Milano MI, Italy.

出版信息

J Chem Phys. 2009 May 14;130(18):184702. doi: 10.1063/1.3121282.

Abstract

A theoretical analysis of the hydrogen-terminated (100) surface of silicon leads to the identification of a new configuration, formed by a silylene center interacting with vicinal silicon dihydrides. This structure may be viewed as a metastable configuration of 2 x 1 (100) (SiH)(2). Silylene can however be stabilized via interaction with water. The paper proposes that some of the anomalous features observed at the hydrogen-terminated or oxidized (100) Si can be attributed to silylene centers datively stabilized by oxo groups or to structures resulting from their decomposition.

摘要

对硅的氢端接(100)表面进行理论分析后,确定了一种新构型,该构型由一个硅烯中心与相邻的二氢化硅相互作用形成。这种结构可被视为2×1(100)(SiH)₂的亚稳构型。然而,硅烯可通过与水相互作用而稳定。本文提出,在氢端接或氧化的(100)硅表面观察到的一些异常特征,可归因于由氧代基团配位稳定的硅烯中心,或归因于其分解产生的结构。

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