Romero Hugo E, Joshi Prasoon, Gupta Awnish K, Gutierrez Humberto R, Cole Milton W, Tadigadapa Srinivas A, Eklund Peter C
Department of Physics, Pennsylvania State University, University Park, PA 16802, USA.
Nanotechnology. 2009 Jun 17;20(24):245501. doi: 10.1088/0957-4484/20/24/245501. Epub 2009 May 26.
We report on experimental studies of NH3 adsorption/desorption on graphene surfaces. The study employs bottom-gated graphene field effect transistors supported on Si/SiO2 substrates. Detection of NH3 occurs through the shift of the source-drain resistance maximum ('Dirac peak') with the gate voltage. The observed shift of the Dirac peak toward negative gate voltages in response to NH3 exposure is consistent with a small charge transfer (f approximately 0.068 +/- 0.004 electrons per molecule at pristine sites) from NH3 to graphene. The desorption kinetics involves a very rapid loss of NH3 from the top surface and a much slower removal from the bottom surface at the interface with the SiO2 that we identify with a Fickian diffusion process.
我们报道了关于氨在石墨烯表面吸附/解吸的实验研究。该研究采用了支撑在Si/SiO₂衬底上的底部栅极石墨烯场效应晶体管。通过源漏电阻最大值(“狄拉克峰”)随栅极电压的变化来检测氨。观察到狄拉克峰在氨暴露时向负栅极电压移动,这与氨向石墨烯的少量电荷转移(在原始位点每分子约0.068±0.004个电子)相一致。解吸动力学包括氨从顶表面非常快速的损失以及在与SiO₂界面处从底表面以慢得多的速度去除,我们将其确定为菲克扩散过程。