Huang C C, Hewak D, Badding J
Opt Express. 2004 May 31;12(11):2501-6. doi: 10.1364/opex.12.002501.
Germanium sulphide glass thin films have been deposited on CaF2 and Schott N-PSK58 glass substrates directly by means of chemical vapor deposition (CVD). The deposition rate of germanium sulphide glass film by this CVD process is estimated about 12 microm/hr at 500oC. These films have been characterized by micro-Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Their transmission range extends from 0.5microm to 7microm measured by UV-VIS-NIR and FT-IR spectroscopy. The refractive index of germanium sulphide glass film measured by prism coupling technique was 2.093+/-0.008 and the waveguide loss measured at 632.8nm by He-Ne laser was 2.1+/-0.3 dB/cm.
通过化学气相沉积(CVD)法,已直接在CaF2和肖特N - PSK58玻璃基板上沉积了硫化锗玻璃薄膜。在500℃下,通过这种CVD工艺沉积硫化锗玻璃薄膜的速率估计约为12微米/小时。这些薄膜已通过显微拉曼光谱、X射线衍射(XRD)和扫描电子显微镜(SEM)进行了表征。通过紫外 - 可见 - 近红外光谱和傅里叶变换红外光谱测量,它们的透射范围从0.5微米延伸至7微米。通过棱镜耦合技术测量的硫化锗玻璃薄膜的折射率为2.093±0.008,通过氦氖激光在632.8nm处测量的波导损耗为2.1±0.3 dB/cm。