磁控溅射制备的铝掺杂Ge(2)Sb(2)Te(5)薄膜的相变特性

Phase change characteristics of aluminum doped Ge(2)Sb(2)Te(5) films prepared by magnetron sputtering.

作者信息

Wei Shenjin, Li Jing, Wu Xia, Zhou Peng, Wang Songyou, Zheng Yuxiang, Chen Liangyao, Gan Fuxi, Zhang Xia, Li Guohua

出版信息

Opt Express. 2007 Aug 20;15(17):10584-90. doi: 10.1364/oe.15.010584.

DOI:10.1364/oe.15.010584

PMID:19547411

Abstract

Aluminum-doped Ge(2)Sb(2)Te(5) (Al(x)GST) films were deposited on Si(100) substrates by co-magnetron sputtering system. The Aluminum concentrations in these films are determined by X-ray photoelectron spectroscopy (XPS). The influence of Al doping upon phase change characteristics of these Al(x)GST alloy films has been investigated by X-ray diffraction (XRD) and a temperature-regulable UVISEL(TM) typed spectroscopic ellipsometry (TRSE). With the augment of Al doping concentration, the crystalline temperatures of Al(x)GST films went up while annealing, and the face-centered-cubic (fcc) phase had high thermal stability. The reflectivity contrast of the films increases obviously, which is effective to improve the signal to noise ratio (SNR) for optical phase-change storage.

摘要

通过共磁控溅射系统在Si(100)衬底上沉积掺铝的Ge₂Sb₂Te₅（AlₓGST）薄膜。这些薄膜中的铝浓度通过X射线光电子能谱（XPS）测定。通过X射线衍射（XRD）和温度可控的UVISEL(TM)型光谱椭偏仪（TRSE）研究了Al掺杂对这些AlₓGST合金薄膜相变特性的影响。随着Al掺杂浓度的增加，AlₓGST薄膜在退火时的结晶温度升高，面心立方（fcc）相具有高热稳定性。薄膜的反射率对比度明显增加，这对于提高光相变存储的信噪比（SNR）是有效的。