Lu Hong-Liang, Ding Shi-Jin, Zhang David Wei
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
J Phys Chem A. 2009 Jul 30;113(30):8791-4. doi: 10.1021/jp904048d.
The mechanisms for reaction between bis(cyclopentadienyl)magnesium and Si(100)-(2x1) surface are investigated with the aid of density functional theory calculations. The reactions on hydrogenated and hydroxylated Si surfaces are compared to understand the dominated initial reaction during atomic layer deposition of MgO on Si surface. The overall reaction energy and activation barrier are calculated for each reaction. It is found that the reaction of bis(cyclopentadienyl)magnesium with OH-terminated Si surface is both kinetically and thermodynamically more favorable than that with H-terminated Si surface.
借助密度泛函理论计算研究了双(环戊二烯基)镁与Si(100)-(2x1)表面之间的反应机理。比较了在氢化和羟基化Si表面上的反应,以了解在Si表面上原子层沉积MgO过程中占主导的初始反应。计算了每个反应的总反应能量和活化能垒。结果发现,双(环戊二烯基)镁与羟基终止的Si表面的反应在动力学和热力学上都比与氢终止的Si表面的反应更有利。