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线性塔尔博特腔半导体激光器的模态分析

Modal analysis of linear Talbot-cavity semiconductor lasers.

作者信息

Mehuys D, Streifer W, Waarts R G, Welch D F

出版信息

Opt Lett. 1991 Jun 1;16(11):823-5. doi: 10.1364/ol.16.000823.

Abstract

A modal analysis at threshold is presented for linear Talbot-cavity semiconductor lasers with a finite number of array elements. The analysis self-consistently calculates the array supermode profiles and the loss each incurs owing to imperfect Talbot imaging, including edge diffraction losses. It is found that the decrease in mode discrimination between supermodes incurred by fabricating larger arrays can be offset by reducing the near-field fill factor.

摘要

针对具有有限数量阵列元件的线性塔尔博特腔半导体激光器,给出了阈值处的模态分析。该分析自洽地计算了阵列超模分布以及由于塔尔博特成像不完善(包括边缘衍射损耗)而导致的每个超模的损耗。结果发现,通过降低近场填充因子,可以抵消因制造更大阵列而导致的超模之间模式分辨力的下降。

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