Department of Chemistry, Central Washington University, Ellensburg, Washington 98926, USA.
J Phys Chem A. 2010 Feb 18;114(6):2384-92. doi: 10.1021/jp911673h.
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of methyltrichlorosilane (Ge, Y. B.; Gordon, M. S.; Battaglia, F.; Fox, R. O. J. Phys. Chem. A 2007, 111, 1462.) were calculated. Transition state theory was applied to the reactions with a well-defined transition state; canonical variational transition state theory was applied to the barrierless reactions by finding the generalized transition state with the maximum Gibbs free energy along the reaction path. Geometry optimizations were carried out with second-order perturbation theory (MP2) and the cc-pVDZ basis set. The partition functions were calculated within the harmonic oscillator and rigid rotor approximations. The final potential energy surfaces were obtained using the left-eigenstate coupled-cluster theory, CR-CC(2,3) with the cc-pVTZ basis set. The high-pressure approximation was applied to the unimolecular reactions. The predicted rate constants for more than 50 reactions were compared with the experimental ones at various temperatures and pressures; the deviations are generally less than 1 order of magnitude. Theory is found to be in reasonable agreement with the experiments.
计算了甲基三氯硅烷(Ge,YB;Gordon,MS;Battaglia,F;Fox,RO)在碳化硅化学气相沉积气相反应的速率常数。应用过渡态理论处理具有明确定义过渡态的反应;通过沿反应路径找到最大吉布斯自由能的广义过渡态,将正则变分过渡态理论应用于无势垒反应。采用二阶微扰理论(MP2)和 cc-pVDZ 基组进行几何优化。在谐振子和刚性转子近似下计算配分函数。使用左本征态耦合簇理论(CR-CC(2,3)和 cc-pVTZ 基组)获得最终势能面。对单分子反应采用高压近似。将预测的 50 多个反应的速率常数与不同温度和压力下的实验值进行了比较;偏差一般不超过 1 个数量级。理论与实验结果吻合良好。