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对位于靠近源轴的基板上薄膜厚度均匀性的研究。

Investigation of film thickness uniformity on substrates located close to the source axis.

作者信息

Bennett J M, Ashley E J

出版信息

Appl Opt. 1973 Apr 1;12(4):758-63. doi: 10.1364/AO.12.000758.

Abstract

The thickness uniformity that can be obtained near the source axis in evaporation systems having long source-to-substrate distances (~50 cm) and small area sources has been investigated using multiplebeam interferometry. Silver films were evaporated from resistance-heated dimple boats in standard vacuum and ultrahigh vacuum onto stationary and rotating substrates 3.86 cm in diameter symmetrically placed about the source axis. Thickness variations in the films were measured across substrate diameters, and the average film thicknesses were compared. Similar data were also obtained for aluminum, aluminum oxide, and germanium films. Random thickness variations have been found on all the films, which are much larger than the uniform thickness gradations predicted by the geometric theory. These variations can be minimized but not eliminated by planetary rotation of the substrates.

摘要

利用多光束干涉测量法,研究了在源到衬底距离较长(约50厘米)且源面积较小的蒸发系统中,靠近源轴处可获得的厚度均匀性。在标准真空和超高真空环境下,通过电阻加热凹坑舟将银膜蒸发到直径为3.86厘米的固定和旋转衬底上,这些衬底围绕源轴对称放置。测量了薄膜在衬底直径上的厚度变化,并比较了平均薄膜厚度。对于铝、氧化铝和锗薄膜,也获得了类似的数据。在所有薄膜上都发现了随机的厚度变化,这些变化远大于几何理论预测的均匀厚度渐变。通过衬底的行星式旋转,这些变化可以最小化,但无法消除。

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