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聚焦离子束制备自旋电子纳米结构:铣削工艺的优化。

Focused ion beam fabrication of spintronic nanostructures: an optimization of the milling process.

机构信息

Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2, Brno, Czech Republic.

出版信息

Nanotechnology. 2010 Apr 9;21(14):145304. doi: 10.1088/0957-4484/21/14/145304. Epub 2010 Mar 10.

Abstract

Focused ion beam (FIB) milling has been used to fabricate magnetic nanostructures (wires, squares, discs) from single magnetic layers (Co, permalloy) and spin-valve (permalloy/Cu/Co) multilayers (thicknesses 5-50 nm) prepared by ion beam sputtering deposition. Milled surfaces of metallic thin films typically exhibit residual roughness, which is also transferred onto the edges of the milled patterns. This can lead to domain wall pinning and influence the magnetization behaviour of the nanostructures. We have investigated the milling process and the influence of the FIB parameters (incidence angle, dwell time, overlap and ion beam current) on the roughness of the milled surface. It has been found that the main reasons for increased roughness are different sputter yields for various crystallographic orientations of the grains in polycrystalline magnetic thin films. We have found that the oblique ion beam angle, long dwell time and overlap < 1 are favourable parameters for suppression of this intrinsic roughness. Finally, we have shown how to determine the ion dose necessary to mill through the whole thin film up to the silicon substrate from scanning electron microscopy (SEM) images only.

摘要

聚焦离子束(FIB)铣削已被用于从单磁层(Co、坡莫合金)和自旋阀(坡莫合金/Cu/Co)多层(厚度 5-50nm)中制造磁性纳米结构(线、正方形、圆盘),这些多层是通过离子束溅射沉积制备的。金属薄膜的铣削表面通常会表现出残余粗糙度,这种粗糙度也会转移到铣削图案的边缘上。这可能导致畴壁钉扎并影响纳米结构的磁化行为。我们已经研究了铣削过程以及 FIB 参数(入射角度、停留时间、重叠和离子束电流)对铣削表面粗糙度的影响。我们发现,增加粗糙度的主要原因是多晶磁性薄膜中晶粒的各种晶向的溅射产额不同。我们发现,倾斜的离子束角度、长停留时间和重叠 < 1 是抑制这种固有粗糙度的有利参数。最后,我们展示了如何仅从扫描电子显微镜(SEM)图像确定将整个薄膜铣削到硅衬底所需的离子剂量。

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