Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi, Changning, Shanghai 200050, China.
Langmuir. 2010 Jul 6;26(13):10738-44. doi: 10.1021/la100515k.
This paper describes a solution-phase synthesis of high-quality vanadium dioxide thermochromic thin films. The films obtained showed excellent visible transparency and a large change in transmittance at near-infrared (NIR) wavelengths before and after the metal-insulator phase transition (MIPT). For a 59 nm thick single-layer VO(2) thin film, the integral values of visible transmittance (T(int)) for metallic (M) and semiconductive (S) states were 54.1% and 49.1%, respectively, while the NIR switching efficiencies (DeltaT) were as high as 50% at 2000 nm. Thinner films can provide much higher transmittance of visible light, but they suffer from an attenuation of the switching efficiency in the near-infrared region. By varying the film thickness, ultrahigh T(int) values of 75.2% and 75.7% for the M and S states, respectively, were obtained, while the DeltaT at 2000 nm remained high. These results represent the best data for VO(2) to date. Thicker films in an optimized range can give enhanced NIR switching efficiencies and excellent NIR blocking abilities; in a particularly impressive experiment, one film provided near-zero NIR transmittance in the switched state. The thickness-dependent performance suggests that VO(2) will be of great use in the objective-specific applications. The reflectance and emissivity at the wavelength range of 2.5-25 microm before and after the MIPT were dependent on the film thickness; large contrasts were observed for relatively thick films. This work also showed that the MIPT temperature can be reduced simply by selecting the annealing temperature that induces local nonstoichiometry; a MIPT temperature as low as 42.7 degrees C was obtained by annealing the film at 440 degrees C. These properties (the high visible transmittance, the large change in infrared transmittance, and the near room-temperature MIPT) suggest that the current method is a landmark in the development of this interesting material toward applications in energy-saving smart windows.
本文描述了一种高质量二氧化钒(VO2)热致变色薄膜的溶液相合成方法。所获得的薄膜在金属-绝缘体相变(MIPT)前后表现出极好的可见光透明度和近红外(NIR)波长的透射率的显著变化。对于 59nm 厚的单层 VO2 薄膜,金属(M)态和半导体(S)态的可见光总透过率(T(int))积分值分别为 54.1%和 49.1%,而在 2000nm 处的 NIR 开关效率(DeltaT)高达 50%。更薄的薄膜可以提供更高的可见光透过率,但它们在近红外区域的开关效率会衰减。通过改变薄膜厚度,可以获得分别为 M 和 S 态的超高 T(int)值 75.2%和 75.7%,而在 2000nm 处的 DeltaT 仍然很高。这些结果代表了迄今为止 VO2 的最佳数据。在优化范围内的更厚的薄膜可以提供增强的 NIR 开关效率和优异的 NIR 阻挡能力;在一个特别令人印象深刻的实验中,一个薄膜在开关状态下提供了近零的 NIR 透过率。厚度依赖性的性能表明,VO2 将在特定应用中具有重要的应用价值。MIPT 前后波长范围为 2.5-25μm 的反射率和发射率取决于薄膜厚度;对于相对较厚的薄膜,观察到了较大的对比度。这项工作还表明,通过选择引起局部非化学计量的退火温度,可以简单地降低 MIPT 温度;通过在 440°C 下退火,获得了低至 42.7°C 的 MIPT 温度。这些性能(高可见光透过率、近红外透过率的显著变化和近室温的 MIPT)表明,目前的方法是朝着将这种有趣的材料应用于节能智能窗的发展的一个里程碑。