Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry.

The oxygen distribution in Ni(2)Si and NiSi films formed during a two-step silicidation process was analyzed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS mass spectra revealed that both silicon and nickel reacted with oxygen at the Ni(2)Si surface. In addition, silicon nitride was formed at the surface by the reaction of silicon with nitrogen in the TiN capping layer during the first silicidation annealing. The amount of nitrogen at the NiSi surface varied with silicidation annealing temperature and with the formation conditions of the TiN capping layer. We also showed that a small amount of oxygen was penetrated into the NiSi film and strongly affected the level of junction leakage current in n(+)-p junctions in n-channel MOSFETs. The oxygen concentration in the NiSi film decreased with an increase in the amount of nitrogen at the NiSi surface.