Fang Qing, Liow Tsung-Yang, Song Jun Feng, Ang Kah Wee, Yu Ming Bin, Lo Guo Qiang, Kwong Dim-Lee
Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685 Singapore.
Opt Express. 2010 Mar 1;18(5):5106-13. doi: 10.1364/OE.18.005106.
A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 x 10(-11), the WDM receiver showed an optical input sensitivity between -16 dBm and -19 dBm.
一种高性能的单片集成波分复用(WDM)接收器在绝缘体上硅(SOI)平台上制造而成,其关键组件包括一个1×32硅基阵列波导光栅(AWG)和一系列高速波导硅基锗光电探测器。光通道间距为200吉赫兹。这种配置用于演示L波段的32通道运行,由于锗在L波段波长下的吸收系数较低,这对硅光子学来说尤其具有挑战性。每个通道能够以至少10吉比特每秒的数据速率运行,总数据速率达到320吉比特每秒。在误码率为1×10⁻¹¹时,该WDM接收器的光输入灵敏度在-16分贝毫瓦至-19分贝毫瓦之间。