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使用偏振相关 X 射线显微镜测量单个碳纳米管中的点缺陷密度。

Measuring point defect density in individual carbon nanotubes using polarization-dependent X-ray microscopy.

机构信息

PMR, Facultés Universitaires Notre-Dame de la Paix, Namur, Belgium.

出版信息

ACS Nano. 2010 Aug 24;4(8):4431-6. doi: 10.1021/nn1002248.

Abstract

The presence of defects in carbon nanotubes strongly modifies their electrical, mechanical, and chemical properties. It was long thought undesirable, but recent experiments have shown that introduction of structural defects using ion or electron irradiation can lead to novel nanodevices. We demonstrate a method for detecting and quantifying point defect density in individual carbon nanotubes (CNTs) based on measuring the polarization dependence (linear dichroism) of the C 1s --> pi* transition at specific locations along individual CNTs with a scanning transmission X-ray microscope (STXM). We show that STXM can be used to probe defect density in individual CNTs with high spatial resolution. The quantitative relationship between ion dose, nanotube diameter, and defect density was explored by purposely irradiating selected sections of nanotubes with kiloelectronvolt (keV) Ga(+) ions. Our results establish polarization-dependent X-ray microscopy as a new and very powerful characterization technique for carbon nanotubes and other anisotropic nanostructures.

摘要

碳纳米管中的缺陷会强烈改变其电学、力学和化学性质。长期以来,人们认为这是不理想的,但最近的实验表明,使用离子或电子辐照引入结构缺陷可以导致新型纳米器件的产生。我们展示了一种基于扫描透射 X 射线显微镜(STXM)在单个碳纳米管(CNT)上特定位置测量 C 1s 到 pi*跃迁的极化依赖性(线性二色性)来检测和量化单个 CNT 中点缺陷密度的方法。我们表明,STXM 可用于以高空间分辨率探测单个 CNT 中的缺陷密度。通过用千伏电子伏特(keV)Ga(+)离子有意辐照选定的纳米管部分,我们探索了离子剂量、纳米管直径和缺陷密度之间的定量关系。我们的结果确立了偏振相关 X 射线显微镜作为一种新的、非常强大的碳纳米管和其他各向异性纳米结构的表征技术。

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