采用金属有机化学气相沉积技术在锗衬底上生长 InAs 量子点。

Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique.

机构信息

Department of Physics & Astrophysics, University of Delhi, Delhi, 110007, India.

出版信息

Nanoscale Res Lett. 2009 Sep 19;5(1):31-7. doi: 10.1007/s11671-009-9439-y.

DOI:10.1007/s11671-009-9439-y

PMID:20651909

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2893438/

Abstract

Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

摘要

通过金属有机化学气相沉积技术在锗衬底上生长了自组装的砷化铟量子点（QDs）。研究了生长温度和砷化铟覆盖度对量子点的尺寸、密度和高度的影响。生长温度从 400°C 变化到 450°C，砷化铟覆盖度在 1.40 到 2.35 单层（ML）之间变化。原子力显微镜分析了量子点的表面形貌和结构特征，结果表明，随着砷化铟覆盖度的增加，砷化铟量子点的密度先增加后减少；而密度随生长温度的升高而降低。观察到随着温度和砷化铟覆盖度的增加，砷化铟量子点的尺寸和高度均增加。通过在 GaAs 缓冲层上控制生长温度和砷化铟覆盖度，可以有效地控制 QD 的密度。