Druga T, Wenderoth M, Homoth J, Schneider M A, Ulbrich R G
IV. Physikalisches Institut der Universität Göttingen, Germany.
Rev Sci Instrum. 2010 Aug;81(8):083704. doi: 10.1063/1.3469809.
We have developed a new scanning tunneling potentiometry technique which can-with only minor changes of the electronic setup-be easily added to any standard scanning tunneling microscope (STM). This extension can be combined with common STM techniques such as constant current imaging or scanning tunneling spectroscopy. It is capable of performing measurements of the electrochemical potential with microvolt resolution. Two examples demonstrate the versatile application. First of all, we have determined local variations of the electrochemical potential due to charge transport of biased samples down to angstrom length scales. Second, with tip and sample at different temperatures we investigated the locally varying thermovoltage occurring at the tunneling junction. Aside from its use in determining the chemical identity of substances at the sample surface our method provides a controlled way to eliminate the influence of laterally varying thermovoltages on low-bias constant current topographies.
我们开发了一种新的扫描隧道电位测量技术,只需对电子装置进行微小改动,就能轻松添加到任何标准扫描隧道显微镜(STM)上。这种扩展可以与诸如恒流成像或扫描隧道谱等常见的STM技术相结合。它能够以微伏分辨率进行电化学电位测量。两个例子展示了其广泛的应用。首先,我们已经确定了由于偏置样品的电荷传输导致的电化学电位的局部变化,其尺度可达埃级。其次,通过将探针和样品置于不同温度下,我们研究了隧道结处局部变化的热电压。除了用于确定样品表面物质的化学特性外,我们的方法还提供了一种可控的方式来消除横向变化的热电压对低偏置恒流形貌的影响。