InGaAs/InP雪崩光电二极管单光子探测器的时间分辨光子数分辨

Time-dependent photon number discrimination of InGaAs/InP avalanche photodiode single-photon detector.

作者信息

Jian Yi, Wu E, Chen Xiuliang, Wu Guang, Zeng Heping

机构信息

State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China.

出版信息

Appl Opt. 2011 Jan 1;50(1):61-5. doi: 10.1364/AO.50.000061.

DOI:10.1364/AO.50.000061

PMID:21221161

Abstract

We investigated the photon-number-resolving (PNR) performance of the InGaAs/InP avalanche photodiode (APD) as a function of the electric gate width and the photon arrival time. The optimal electric gate width was around 1 ns for PNR measurements in our experiment, which provided a PNR capability up to three photons per pulse when the detection efficiency was ~20%. And the dependence of the PNR performance on the arrival time of the photons showed that the photon number could be better resolved if the photons arrived on the rising edge of the electric gate than on the falling edge. In addition, we found that with the increase of the electric gate width, PNR performance got worse. The observation would be helpful for improving the PNR performance of the InGaAs/InP APD in the gated mode.

摘要

我们研究了InGaAs/InP雪崩光电二极管（APD）的光子数分辨（PNR）性能与电门宽度和光子到达时间的函数关系。在我们的实验中，用于PNR测量的最佳电门宽度约为1 ns，当探测效率约为20%时，每脉冲可提供高达三个光子的PNR能力。并且PNR性能对光子到达时间的依赖性表明，如果光子在电门的上升沿到达，比在下降沿到达时能更好地分辨光子数。此外，我们发现随着电门宽度的增加，PNR性能变差。该观察结果将有助于改善门控模式下InGaAs/InP APD的PNR性能。