Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA.
ACS Appl Mater Interfaces. 2011 May;3(5):1463-71. doi: 10.1021/am200028u. Epub 2011 Apr 12.
Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.
已经合成了两种基于供体-受体二酮吡咯并吡咯(DPP)的共聚物(PDPP-BBT 和 TDPP-BBT),用于金属-绝缘体-半导体(MIS)二极管和场效应晶体管(FET)等有机器件的应用。通过电容-电压和电导-电压方法对半导体-介电界面进行了表征。这些测量在 TDPP-BBT 中得出在平带电压下的界面陷阱密度为 4.2×10(12) eV⁻¹ cm⁻²,在 PDPP-BBT 中为 3.5×10¹² eV⁻¹ cm⁻²。基于这些旋涂 DPP 共聚物的 FET 表现出 p 型通道行为,空穴迁移率约为 10⁻³ cm²/(Vs)。来自 PDPP-BBT FET 的光散射研究表明,在器件允许在栅极电压下运行后,拉曼光谱几乎没有变化,这表明 FET 由于金属-聚合物接触或电场的应用而受到的最小损坏。作为比较,呈现了来自 pentacene FET 的通道-Au 接触层的 Raman 强度轮廓,其在偏置前后显示出明显的变化。