Department of Integrative Physiology, National Institute for Physiological Sciences, Okazaki, Japan.
Eur J Appl Physiol. 2012 Jan;112(1):207-14. doi: 10.1007/s00421-011-1973-5. Epub 2011 Apr 26.
We investigated the relationship between reaction time (RT) and response variability and somatosensory Go/No-go potentials. Event-related potentials following electrical stimulation of the second (Go stimulus) or fifth (No-go stimulus) digit of the left hand were recorded from 16 subjects, and Go and No-go stimuli were presented at an even probability. The subjects were instructed to respond to the Go stimuli by pushing a button with their right thumb. We analyzed the correlation between RT and the N140 and P300 components, and between the standard deviation (SD) of RT and the N140 and P300. Neither the amplitude nor latency of the No-go-N140 (N140 evoked by No-go stimuli) or the Go-N140 (N140 evoked by Go stimuli) related significantly with RT and the SD of RT. There was a significant negative correlation between RT and the amplitude of the No-go-P300 (P300 evoked by No-go stimuli) at Fz and C3, indicating that subjects with a shorter RT had a No-go-P300 of larger amplitude. The latency of the Go-P300 (P300 evoked by Go stimuli) at Pz and C3 showed a significant correlation with RT. The SD of RT was significantly correlated with the amplitudes of the No-go-P300 at C3 and Go-P300 at Pz and C4, and the latency of the No-go-P300 at Cz and Go-P300 at Fz, Cz, Pz, C3, and C4. Our results suggest that response speed and variability for the Go stimulus in Go/No-go paradigms affect No-go-related neural activity for the No-go stimulus.
我们研究了反应时间(RT)和反应变异性与体感 Go/No-go 电位之间的关系。对 16 名被试者左手第二(Go 刺激)或第五(No-go 刺激)指的电刺激后进行了事件相关电位记录,Go 和 No-go 刺激以相同概率呈现。被试者被指示用右手拇指对 Go 刺激做出反应。我们分析了 RT 与 N140 和 P300 成分之间的相关性,以及 RT 的标准差(SD)与 N140 和 P300 之间的相关性。No-go-N140(No-go 刺激诱发的 N140)或 Go-N140(Go 刺激诱发的 N140)的振幅和潜伏期均与 RT 和 RT 的 SD 无显著相关性。在 Fz 和 C3 处,RT 与 No-go-P300(No-go 刺激诱发的 P300)的振幅呈显著负相关,表明 RT 较短的被试者的 No-go-P300 振幅较大。在 Pz 和 C3 处,Go-P300(Go 刺激诱发的 P300)的潜伏期与 RT 呈显著相关。RT 的 SD 与 C3 处的 No-go-P300 和 Pz 和 C4 处的 Go-P300 的振幅,以及 Cz 处的 No-go-P300 和 Fz、Cz、Pz、C3 和 C4 处的 Go-P300 的潜伏期均显著相关。我们的结果表明,Go/No-go 范式中 Go 刺激的反应速度和变异性会影响 No-go 刺激的与 No-go 相关的神经活动。