喷墨打印铜纳米颗粒薄膜烧结中羧酸的作用。
Effect of carboxylic acid on sintering of inkjet-printed copper nanoparticulate films.
机构信息
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
出版信息
ACS Appl Mater Interfaces. 2011 Jul;3(7):2377-82. doi: 10.1021/am2002907. Epub 2011 Jun 8.
The reduction effect of various carboxylic acids on inkjet-printed copper film was investigated. Carboxylic acids were exposed to the film by nitrogen gas that was bubbled through the liquid acids during the annealing process. It was observed that in the case of saturated monocarboxylic acid (formic, acetic, propionic, butyric), the acids with shorter hydrocarbon chains perform better in reducing the surface copper oxides in the printed copper conductive film. The printed films exposed to formic acid vapor exhibited the lowest resistivity (3.10 and 2.30 μΩ cm when annealed at 200 and 250 °C, respectively). In addition, the oxalic acid more effectively reduces copper oxide than formic acid and its usage can shorten the annealing time for highly conductive printed copper film. This reductive annealing process allows fabrication of copper patterns with low resistivity, (3.82 μΩ cm annealed at 250 °C) comparable to the resistivity of bulk copper.
研究了各种羧酸对喷墨打印铜膜的还原效果。在退火过程中，氮气通过液体酸鼓泡将羧酸暴露在薄膜上。观察到，在饱和一元羧酸（甲酸、乙酸、丙酸、丁酸）的情况下，烃链较短的酸在还原打印铜导电膜表面的氧化铜方面表现更好。暴露于甲酸蒸气的打印膜表现出最低的电阻率（在 200 和 250°C 下退火时分别为 3.10 和 2.30 μΩ·cm）。此外，草酸比甲酸更有效地还原氧化铜，并且其使用可以缩短高导电性打印铜膜的退火时间。这种还原退火工艺允许制造具有低电阻率的铜图案（在 250°C 下退火时为 3.82 μΩ·cm），与块状铜的电阻率相当。
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