Birrell James, Gerbi J E, Auciello O A, Carlisle J A
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA.
J Phys Condens Matter. 2006 Aug 16;18(32):S1771-6. doi: 10.1088/0953-8984/18/32/S08. Epub 2006 Jul 25.
Hydrogen has long been known to be critical for the growth of high-quality microcrystalline diamond thin films as well as homoepitaxial single-crystal diamond. A hydrogen-poor growth process that results in ultra-nanocrystalline diamond thin films has also been developed, and it has been theorized that diamond growth with this gas chemistry can occur in the absence of hydrogen. This study investigates the role of hydrogen in the growth of ultra-nanocrystalline diamond thin films in two different regimes. First, we add hydrogen to the gas phase during growth, and observe that there seems to be a competitive growth process occurring between microcrystalline diamond and ultra-nanocrystalline diamond, rather than a simple increase in the grain size of ultra-nanocrystalline diamond. Second, we remove hydrogen from the plasma by changing the hydrocarbon precursor from methane to acetylene and observe that there does seem to be some sort of lower limit to the amount of hydrogen that can sustain ultra-nanocrystalline diamond growth. We speculate that this is due to the amount of hydrogen needed to stabilize the surface of the growing diamond nanocrystals.
长期以来,人们一直认为氢对于高质量微晶金刚石薄膜以及同质外延单晶金刚石的生长至关重要。一种导致超纳米晶金刚石薄膜的贫氢生长工艺也已被开发出来,并且从理论上推测,在这种气体化学条件下,金刚石的生长可以在没有氢的情况下发生。本研究在两种不同情况下研究了氢在超纳米晶金刚石薄膜生长中的作用。首先,我们在生长过程中向气相中添加氢,并观察到在微晶金刚石和超纳米晶金刚石之间似乎存在一个竞争生长过程,而不是超纳米晶金刚石晶粒尺寸的简单增加。其次,我们通过将碳氢化合物前驱体从甲烷改为乙炔来从等离子体中去除氢,并观察到对于能够维持超纳米晶金刚石生长的氢量似乎确实存在某种下限。我们推测这是由于稳定生长的金刚石纳米晶体表面所需的氢量所致。