从光致发光中提取表面陷阱能级：以 ZnO 纳米结构为例。

Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures.

机构信息

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.

出版信息

Phys Chem Chem Phys. 2011 Sep 7;13(33):14902-5. doi: 10.1039/c1cp21527b. Epub 2011 Jul 11.

DOI:10.1039/c1cp21527b

PMID:21743930

Abstract

Negative thermal quenching of both the excitonic and green emissions is observed in ZnO nanosheets, from which the energy level of surface traps can be extracted based on a model of multi-level transitions. The present study demonstrates a non-destructive and easy method to determine the trap levels in semiconductor nanostructures.

摘要

在氧化锌纳米片中观察到激子和绿光发射的负热猝灭，根据多级跃迁模型可以提取表面陷阱的能级。本研究展示了一种非破坏性且易于确定半导体纳米结构中陷阱能级的方法。