Han Y, Li W Y, Cao L X, Zhang S, Xu B, Zhao B R
National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
J Phys Condens Matter. 2009 Jun 10;21(23):235702. doi: 10.1088/0953-8984/21/23/235702. Epub 2009 May 15.
FeSe(x) (x = 0.80,0.84,0.88,0.92) thin films were prepared on SrTiO(3)(001)(STO), (La,Sr)(Al,Ta)O(3)(001) (LSAT), and LaAlO(3)(001) (LAO) substrates by a pulsed laser deposition method. All of the thin films show single-phase and c-axis oriented epitaxial growth, and are superconducting. Among them, the FeSe(0.88) thin films show a T(c,onset) of 11.8 K and a T(c,0) of 3.4 K. The upper critical magnetic field is estimated to be 14.0 T.
通过脉冲激光沉积法在SrTiO(3)(001)(STO)、(La,Sr)(Al,Ta)O(3)(001)(LSAT)和LaAlO(3)(001)(LAO)衬底上制备了FeSe(x)(x = 0.80、0.84、0.88、0.92)薄膜。所有薄膜均呈现单相且c轴取向的外延生长,并且具有超导性。其中,FeSe(0.88)薄膜的起始转变温度T(c,onset)为11.8 K,零电阻温度T(c,0)为3.4 K。估计其临界磁场上限为14.0 T。