Chen T T, Hsieh Y P, Wei C M, Chen Y F, Chen L-C, Chen K-H, Peng Y H, Kuan C H
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Nanotechnology. 2008 Sep 10;19(36):365705. doi: 10.1088/0957-4484/19/36/365705. Epub 2008 Jul 28.
The enhancement of light extraction from Si(0.5)Ge(0.5)/Si multiple quantum wells (MQWs) with nanowall structures fabricated by electron cyclotron resonance (ECR) plasma etching is presented. It is shown that the ECR plasma treatment does not damage the crystalline quality. At a driving current of 5.5 × 10(6) A m(-2), the light output intensity of the MQWs with nanowall structures shows an enhancement of about 50% compared with that of the original MQWs. In addition to the enhanced light extraction, the improved optoelectronic properties are also attributed to the strain relaxation in nanowall structures.
本文介绍了通过电子回旋共振（ECR）等离子体蚀刻制备的具有纳米壁结构的Si(0.5)Ge(0.5)/Si多量子阱（MQW）的光提取增强情况。结果表明，ECR等离子体处理不会损害晶体质量。在驱动电流为5.5×10(6) A m(-2)时，具有纳米壁结构的MQW的光输出强度与原始MQW相比提高了约50%。除了增强的光提取外，纳米壁结构中的应变弛豫也归因于光电性能的改善。
Zotero 插件