Department of Chemistry & Biochemistry, University of California, Los Angeles, CA, USA.
Nanoscale. 2011 Oct 5;3(10):4060-8. doi: 10.1039/c1nr10668f. Epub 2011 Aug 25.
In this mini-review, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures-single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion batteries, gas sensors and drug delivery.
在这篇迷你综述中,我们总结了新型一维纳米结构——单晶多孔硅纳米线的合成、性质和应用方面的最新进展。通过一步或两步反应,从具有各种掺杂浓度的 p 型和 n 型硅片上都可以生长多孔硅纳米线。机理研究表明,硅片的掺杂浓度、氧化剂浓度、刻蚀时间和温度都会影响所得到的硅纳米线的形态。多孔硅纳米线具有光学和电子活性,并已在包括光催化、锂离子电池、气体传感器和药物输送等多个领域的潜在应用中进行了探索。