WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
ACS Nano. 2011 Oct 25;5(10):7967-71. doi: 10.1021/nn202477n. Epub 2011 Sep 14.
The initial homoepitaxial growth of SrTiO(3) on a (√13 × √13)-R33.7° SrTiO(3)(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO(3) film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO(3) substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.
通过扫描隧道显微镜,对在(001)衬底表面上可在氧化物生长条件下制备的(√13 × √13)-R33.7° SrTiO3 上的 SrTiO3 的初始同型外延生长进行了原子分辨。在沉积的 SrTiO3 薄膜表面以及衬底上都可以清楚地看到相同的(√13 × √13)原子结构。这一结果表明,最上面的富钛(√13 × √13)结构转移到了薄膜表面,并且在薄膜/衬底界面处实现了原子级的相干外延。这样的原子有序 SrTiO3 衬底可应用于原子级控制的氧化物外延薄膜和异质结构的制造。